HERALD

BALD Engineering AB

Born in Finland, Born to ALD

HERALD - Hooking together European research in atomic layer deposition

 

MPNS COST Action MP1402

 

This Action aims to structure and integrate European research activity in atomic layer deposition (ALD), bringing together existing groups, promoting young scientists and reaching out to industry and the public. ALD is a unique technique for growing ultra-thin films that is enabling new developments in high-tech manufacturing sectors such as electronics, energy and coatings. With interest growing worldwide, the time is right to coordinate European activity in this field, which until now has been fragmented, despite the presence of world-leading research groups and companies. The scientific collaborations in the Action will cover new processes (precursor chemicals and equipment), fundamental understanding (metrology and modeling), innovative materials (nanoscale interfaces, 2D materials) and applications (semiconductor devices, photovoltaics, energy storage, sensors, protective coatings for organic elements and fibers). Networking activity will consist of student bursaries, topical workshops, conference sponsorship, joint publications and marketing. It is intended to establish a framework for this activity in Europe that will outlast the duration of the Action and ensure Europe’s leading position into the future

 

Chair of the Action:

Dr Simon ELLIOTT (IE)

Vice Chair of the Action:

Dr Claudia WIEMER (IT)

Science officer of the Action:

Dr Maria MORAGUES CANOVAS

Administrative officer of the Action:

Ms Milena STOYANOVA

 

HERALD Web

Tyndall HERALD Page

Action Fact Sheet

Download AFS as .RTF

Memorandum of Understanding

Download MoU as PDF

 

 

 

 

 

 

 

Working Groups

WG1 Mechanism, metrology & modelling To elucidate ALD mechanisms through metrology, especially in situ measurements, and through modeling of growth chemistry.

WG2 Precursors and processes To synthesise new chemical precursors and use them in thin film deposition experiments to find viable ALD processes for materials where no process exists at present.

WG3 Substrates and interfaces To achieve control of interfaces through ALD, understanding nucleation, depositing onto 2D materials and developing new approaches to selective-area ALD.

WG4 Devices To develop and integrate ALD processes for oxides, sulfides and nitrides for applications in transparent electronics, memristors, light emitting devices and nanosensors, in collaboration with industry.

WG5 Organic / inorganic hybrid films To develop processes for the molecular layer deposition (MLD) of hybrid organic/inorganic films, along with optimization of material properties.

CG Communications group

IG Innovation group

COPYRIGHT © | ALL RIGHTS RESERVED

PRIVACY STATEMENT | TERMS & CONDITIONS